to-92l plastic-encapsulate transistors TPT5610 transistor (pnp) features z excellent l inearity of current gain z low saturation voltage z complementary to tpt5609 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector- base voltage -25 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -continuous -1 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =- 10 a, i e =0 -25 v collector-emitter breakdown voltage v (br)ceo i c =- 1 ma, i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =- 10 a, i c =0 -5 v collector cut-off current i cbo v cb =- 20 v, i e =0 -1 a emitter cut-off current i ebo v eb =- 5 v, i c =0 -1 a dc current gain h fe v ce =- 2 v, i c =- 500 ma 60 240 collector-emitter saturation voltage v ce(sat) i c =- 800 ma, i b =- 80 ma -0.5 v base-emitter voltage v be v ce =- 2 v, i c =- 500 ma -1 v transition frequency f t v ce =- 2 v, i c =- 500 ma 350 mhz collector output capacitance c ob v cb =- 10 v, i e =0, f= 1 mhz 38 pf classification of h fe rank a b c range 60-120 85-170 120-240 to-92l 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2013
|
